Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Corsair CMK32GX4M4E4133C19 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Corsair CMK32GX4M4E4133C19 8GB

Corsair CMK32GX4M4E4133C19 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Corsair CMK32GX4M4E4133C19 8GB

需要考虑的原因
Corsair CMK32GX4M4E4133C19 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 42

左右 -91% 更低的延时
更快的读取速度，GB/s

19.1 9.7

测试中的平均数值
更快的写入速度，GB/s

14.7 6.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Corsair CMK32GX4M4E4133C19 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 22
读取速度，GB/s

9.7 19.1
写入速度，GB/s

6.0 14.7
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1396 3509

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4SFD832A.C16FP 16GB

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EVGA 8GX-D4-3000-MR 8GB

EVGA 8GX-D4-3000-MR 8GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

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Kingston 9905713-030.A00G 8GB

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

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SK Hynix HMA81GS6JJR8N-VK 8GB

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Lexar Co Limited LD4AU016G-H3200GST 16GB

Crucial Technology BLS16G4S240FSD.16FD 16GB

Crucial Technology BLS16G4S240FSD.16FD 16GB