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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL16G26C16S4B.16FD 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology BL16G26C16S4B.16FD 16GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Crucial Technology BL16G26C16S4B.16FD 16GB

Crucial Technology BL16G26C16S4B.16FD 16GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
Crucial Technology BL16G26C16S4B.16FD 16GB 需要考虑的原因
Crucial Technology BL16G26C16S4B.16FD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    36 left arrow 42
    左右 -17% 更低的延时
  • 更快的读取速度，GB/s
    16.3 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.9 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL16G26C16S4B.16FD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 36
  • 读取速度，GB/s
    9.7 left arrow 16.3
  • 写入速度，GB/s
    6.0 left arrow 13.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 3044

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Crucial Technology BL16G26C16S4B.16FD 16GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL16G26C16S4B.16FD 16GB
Crucial Technology BL16G26C16S4B.16FD 16GB
内存RAM
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Samsung M378A2K43DB1-CTD 16GB
Samsung M378A2K43DB1-CTD 16GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
内存RAM
Corsair CMV4GX3M1B1600C11 4GB
Corsair CMV4GX3M1B1600C11 4GB
Samsung M471A1K1KBB0-CPB 8GB
Samsung M471A1K1KBB0-CPB 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Corsair CMK16GX4M2B3466C16 8GB
Corsair CMK16GX4M2B3466C16 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Lenovo 16GB
Lenovo 16GB
内存RAM
Crucial Technology CT51264BA1339.D16F 4GB
Crucial Technology CT51264BA1339.D16F 4GB
Corsair CM4X16GE2666C18S2 16GB
Corsair CM4X16GE2666C18S2 16GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Corsair CMK16GX4M1A2400C14 16GB
Corsair CMK16GX4M1A2400C14 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
JUHOR JHD2666U1916JG 16GB
JUHOR JHD2666U1916JG 16GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 9905598-028.A00G 8GB
Kingston 9905598-028.A00G 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CM4X16GE2133C15S2 16GB
Corsair CM4X16GE2133C15S2 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
内存RAM