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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology BL8G36C16U4WL.M8FE1 8GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Crucial Technology BL8G36C16U4WL.M8FE1 8GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
Crucial Technology BL8G36C16U4WL.M8FE1 8GB 需要考虑的原因
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 42
    左右 -35% 更低的延时
  • 更快的读取速度，GB/s
    19.1 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.6 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL8G36C16U4WL.M8FE1 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 31
  • 读取速度，GB/s
    9.7 left arrow 19.1
  • 写入速度，GB/s
    6.0 left arrow 15.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 3553

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Crucial Technology BL8G36C16U4WL.M8FE1 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D240FSC.16FBD 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 99U5428-018.A00LF 8GB
Kingston 99U5428-018.A00LF 8GB
G Skill Intl F4-2400C14-4GRK 4GB
G Skill Intl F4-2400C14-4GRK 4GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
G Skill Intl F4-3400C16-8GTZSW 8GB
G Skill Intl F4-3400C16-8GTZSW 8GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kingston KTD3KX-HYA 8GB
Kingston KTD3KX-HYA 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BL8G32C16U4B.8FE 8GB
Crucial Technology BL8G32C16U4B.8FE 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Kingston KHX3200C16D4/32GX 32GB
Kingston KHX3200C16D4/32GX 32GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5712-009.A00G 16GB
Kingston 99U5712-009.A00G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Samsung M393B2G70DB0-CK0 16GB
Samsung M393B2G70DB0-CK0 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Asgard VMA42UH-MEC1U2AJ2 16GB
Asgard VMA42UH-MEC1U2AJ2 16GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingston 9905622-024.A00G 4GB
Kingston 9905622-024.A00G 4GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
King Tiger Technology TMKG8G3000C17(XMP) 8GB
King Tiger Technology TMKG8G3000C17(XMP) 8GB
内存RAM
Samsung M471B5173EB0-YK0 4GB
Samsung M471B5173EB0-YK0 4GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
内存RAM
Samsung M3 78T6553CZ3-CE6 512MB
Samsung M3 78T6553CZ3-CE6 512MB
SK Hynix HMA81GU6DJR8N-XN 8GB
SK Hynix HMA81GU6DJR8N-XN 8GB
内存RAM