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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CB8GS2400.C8D 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology CB8GS2400.C8D 8GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Crucial Technology CB8GS2400.C8D 8GB

Crucial Technology CB8GS2400.C8D 8GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 89
    左右 53% 更低的延时
Crucial Technology CB8GS2400.C8D 8GB 需要考虑的原因
Crucial Technology CB8GS2400.C8D 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.6 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.8 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CB8GS2400.C8D 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 89
  • 读取速度，GB/s
    9.7 left arrow 13.6
  • 写入速度，GB/s
    6.0 left arrow 6.8
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 1518

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Crucial Technology CB8GS2400.C8D 8GB RAM的比较

G Skill Intl F4-2800C15-4GVR 4GB
Crucial Technology CT32G4SFD8266.C16FB 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CMW32GX4M2Z3200C16 16GB
Corsair CMW32GX4M2Z3200C16 16GB
内存RAM
SK Hynix HMT425S6CFR6A-PB 2GB
SK Hynix HMT425S6CFR6A-PB 2GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
Crucial Technology BL8G36C16U4B.M8FE1 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-3000C16-16GSXKB 16GB
G Skill Intl F4-3000C16-16GSXKB 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
G Skill Intl F4-2400C17-4GVR 4GB
G Skill Intl F4-2400C17-4GVR 4GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
G Skill Intl F4-2133C15-16GFT 16GB
G Skill Intl F4-2133C15-16GFT 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-2666C15-8GRKB 8GB
G Skill Intl F4-2666C15-8GRKB 8GB
内存RAM
Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Samsung M378A5244CB0-CWE 4GB
Samsung M378A5244CB0-CWE 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMR64GX4M4C3200C16 16GB
Corsair CMR64GX4M4C3200C16 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin MR[A/B]4U280HHHH8G 8GB
Mushkin MR[A/B]4U280HHHH8G 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
Micron Technology 8ATF1G64HZ-2G3B1 8GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Crucial Technology CT8G4SFS824A.C8FDR1 8GB
Crucial Technology CT8G4SFS824A.C8FDR1 8GB
内存RAM
Samsung M471A1K43EB1-CWE 8GB
Samsung M471A1K43EB1-CWE 8GB
Kingston 9905783-025.A01G 16GB
Kingston 9905783-025.A01G 16GB
内存RAM
Kingston 9905471-006.A01LF 4GB
Kingston 9905471-006.A01LF 4GB
SK Hynix HMA82GS6CJR8N-XN 16GB
SK Hynix HMA82GS6CJR8N-XN 16GB
内存RAM