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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Crucial Technology CT16G4SFD824A.C16FBR 16GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
Crucial Technology CT16G4SFD824A.C16FBR 16GB 需要考虑的原因
Crucial Technology CT16G4SFD824A.C16FBR 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 42
    左右 -20% 更低的延时
  • 更快的读取速度，GB/s
    14.5 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.6 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 35
  • 读取速度，GB/s
    9.7 left arrow 14.5
  • 写入速度，GB/s
    6.0 left arrow 10.6
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 2664

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Gloway International (HK) STK4U2400D17042C 4GB
Gloway International (HK) STK4U2400D17042C 4GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
G Skill Intl F4-4000C18-16GVK 16GB
G Skill Intl F4-4000C18-16GVK 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
SK Hynix HMA82GS6CJR8N-V-V 16GB
SK Hynix HMA82GS6CJR8N-V-V 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
Crucial Technology CT16G4SFD824A.C16FBR 16GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
Essencore Limited IM48GU48A32-GIISMZ 8GB
内存RAM
Avant Technology F6451U64F9333G 4GB
Avant Technology F6451U64F9333G 4GB
Roa Logic BV iGame DDR4 8G 3000 8GB
Roa Logic BV iGame DDR4 8G 3000 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
Hoodisk Electronics Co Ltd GKE400UD51208-2400AH 4GB
内存RAM
A-DATA Technology DDR2 800G 2GB
A-DATA Technology DDR2 800G 2GB
Corsair CMD8GX4M2B3000C15 4GB
Corsair CMD8GX4M2B3000C15 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
EVGA 16G-D4-2400-MR 8GB
EVGA 16G-D4-2400-MR 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Corsair CM4X8GF2400C16S4 8GB
Corsair CM4X8GF2400C16S4 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
SK Hynix HMA41GR7MFR8N-TF 8GB
SK Hynix HMA41GR7MFR8N-TF 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Kingston KHX3600C17D4/16GX 16GB
Kingston KHX3600C17D4/16GX 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-2133C15-4GRK 4GB
G Skill Intl F4-2133C15-4GRK 4GB
内存RAM