Corsair CM3X8GA2400C11Y2R 8GB vs Memphis Electronic D4SO1G724GI-A58SD 8GB

总分

Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

总分

Memphis Electronic D4SO1G724GI-A58SD 8GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

差异规格评论

差异

Corsair CM3X8GA2400C11Y2R 8GB

需要考虑的原因
Corsair CM3X8GA2400C11Y2R 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 30

左右 33% 更低的延时
更快的读取速度，GB/s

19.1 11.7

测试中的平均数值
更快的写入速度，GB/s

13.1 6.6

测试中的平均数值

Memphis Electronic D4SO1G724GI-A58SD 8GB

需要考虑的原因
Memphis Electronic D4SO1G724GI-A58SD 8GB

报告一个错误

更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Corsair CM3X8GA2400C11Y2R 8GB

Memphis Electronic D4SO1G724GI-A58SD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

20 30
读取速度，GB/s

19.1 11.7
写入速度，GB/s

13.1 6.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3252 1832

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

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AMD R538G1601U2S-UO 8GB

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Crucial Technology CT8G4DFD824A.M16FE 8GB

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Kingston KHX1600C9D3/8G 8GB

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Crucial Technology BL8G32C16U4B.M8FE1 8GB

Crucial Technology BL8G32C16U4B.M8FE1 8GB