Kingston 9905403-011.A03LF 2GB vs G Skill Intl F4-3600C19-8GSXWB 8GB

总分

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

总分

G Skill Intl F4-3600C19-8GSXWB 8GB

G Skill Intl F4-3600C19-8GSXWB 8GB

差异规格评论

差异

Kingston 9905403-011.A03LF 2GB

需要考虑的原因
Kingston 9905403-011.A03LF 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 29

左右 7% 更低的延时

G Skill Intl F4-3600C19-8GSXWB 8GB

需要考虑的原因
G Skill Intl F4-3600C19-8GSXWB 8GB

报告一个错误

更快的读取速度，GB/s

19.4 13

测试中的平均数值
更快的写入速度，GB/s

15.8 8.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingston 9905403-011.A03LF 2GB

G Skill Intl F4-3600C19-8GSXWB 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 29
读取速度，GB/s

13.0 19.4
写入速度，GB/s

8.0 15.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1976 3614

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273DH0-CH9 4GB

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A-DATA Technology AM2L16BC4R1-B0AS 4GB

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Gloway International Co. Ltd. TYA4U2666D19081C 8GB

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Apacer Technology 78.01GA0.9K5 1GB

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Kingston 8ATF1G64HZ-2G3B2 8GB

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G Skill Intl F4-3600C18-16GTRG 16GB

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Corsair CMSX32GX4M2A2666C18 16GB

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Samsung M391B5673EH1-CH9 2GB

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Samsung DDR3 8GB 1600MHz 8GB

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Kingston KDK8NX-MIE 16GB

Kingston KDK8NX-MIE 16GB

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Corsair CMV4GX3M1A1333C9 4GB

Corsair CMV4GX3M1A1333C9 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Mushkin MRA4S320GJJM16G 16GB

Mushkin MRA4S320GJJM16G 16GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Elpida EBJ40EG8BFWB-JS-F 4GB

Corsair CM4X4GF3000C15K4 4GB

Corsair CM4X4GF3000C15K4 4GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB

SanMax Technologies Inc. SMD-8G28HP-21P 8GB