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Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3866C18-8GTZ 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs G Skill Intl F4-3866C18-8GTZ 8GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
G Skill Intl F4-3866C18-8GTZ 8GB

G Skill Intl F4-3866C18-8GTZ 8GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
G Skill Intl F4-3866C18-8GTZ 8GB 需要考虑的原因
G Skill Intl F4-3866C18-8GTZ 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 42
    左右 -45% 更低的延时
  • 更快的读取速度，GB/s
    20.2 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3866C18-8GTZ 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 29
  • 读取速度，GB/s
    9.7 left arrow 20.2
  • 写入速度，GB/s
    6.0 left arrow 13.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 3241

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

G Skill Intl F4-3866C18-8GTZ 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Corsair CMK16GX4M2A2800C16 8GB
Corsair CMK16GX4M2A2800C16 8GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
Patriot Memory (PDP Systems) 3600 C16 Series 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CM4X8GF2666C16K4 8GB
Corsair CM4X8GF2666C16K4 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston 9965669-025.A00G 8GB
Kingston 9965669-025.A00G 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Samsung M393A5143DB0-CRC 4GB
Samsung M393A5143DB0-CRC 4GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMW16GX4M1Z3600C18 16GB
Corsair CMW16GX4M1Z3600C18 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston KF3200C20S4/32GX 32MB
Kingston KF3200C20S4/32GX 32MB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
G Skill Intl F4-2400C15-8GVB 8GB
G Skill Intl F4-2400C15-8GVB 8GB
内存RAM
Kingston 9905402-665.A00LF 4GB
Kingston 9905402-665.A00LF 4GB
PUSKILL PJ16TFK1GM8 16GB
PUSKILL PJ16TFK1GM8 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
G Skill Intl F4-3000C15-8GVKB 8GB
G Skill Intl F4-3000C15-8GVKB 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
Crucial Technology CT16G4SFRA266.M8FB 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-2133C15-8GFT 8GB
G Skill Intl F4-2133C15-8GFT 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFRA266.C16FP 16GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
内存RAM