A-DATA Technology DQKD1A08 1GB vs Crucial Technology CT16G4SFRA266.M8FB 16GB

总分

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

总分

Crucial Technology CT16G4SFRA266.M8FB 16GB

Crucial Technology CT16G4SFRA266.M8FB 16GB

差异规格评论

差异

A-DATA Technology DQKD1A08 1GB

需要考虑的原因
A-DATA Technology DQKD1A08 1GB

报告一个错误

更快的读取速度，GB/s

2 15.2

测试中的平均数值

Crucial Technology CT16G4SFRA266.M8FB 16GB

需要考虑的原因
Crucial Technology CT16G4SFRA266.M8FB 16GB

报告一个错误

低于PassMark测试中的延时，ns

31 52

左右 -68% 更低的延时
更快的写入速度，GB/s

13.2 1,145.9

测试中的平均数值
更高的内存带宽，mbps

21300 4200

左右 5.07 更高的带宽

规格

完整的技术规格清单

A-DATA Technology DQKD1A08 1GB

Crucial Technology CT16G4SFRA266.M8FB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

52 31
读取速度，GB/s

2,614.5 15.2
写入速度，GB/s

1,145.9 13.2
内存带宽，mbps

4200 21300

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

4-4-4-12 / 533 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

409 3217

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Samsung V-GeN D4S16GL26A8TL6 16GB

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AMD AE34G1601U1 4GB

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Corsair CMK32GX4M4C3000C15 8GB

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Micron Technology 8ATF51264AZ-2G1A2 4GB

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Samsung M3 78T2863EHS-CF7 1GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Apacer Technology D12.2755BS.001 16GB

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Transcend Information TS1GLH64V4H 8GB

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Terabyte Co Ltd RCX2-16G3000R 8GB

Terabyte Co Ltd RCX2-16G3000R 8GB