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Kingmax Semiconductor FLFE85F-C8KM9 2GB
Terabyte Co Ltd RCX2-16G3000R 8GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB vs Terabyte Co Ltd RCX2-16G3000R 8GB

总分
star star star star star
Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

总分
star star star star star
Terabyte Co Ltd RCX2-16G3000R 8GB

Terabyte Co Ltd RCX2-16G3000R 8GB

差异 规格 评论

差异

Kingmax Semiconductor FLFE85F-C8KM9 2GB 需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KM9 2GB
报告一个错误
Terabyte Co Ltd RCX2-16G3000R 8GB 需要考虑的原因
Terabyte Co Ltd RCX2-16G3000R 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 26
    左右 -30% 更低的延时
  • 更快的读取速度，GB/s
    19.5 left arrow 11.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 7.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Terabyte Co Ltd RCX2-16G3000R 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 20
  • 读取速度，GB/s
    11.9 left arrow 19.5
  • 写入速度，GB/s
    7.6 left arrow 15.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1610 left arrow 3483

Kingmax Semiconductor FLFE85F-C8KM9 2GB RAM的比较

Samsung M378B5673EH1-CH9 2GB
Kingston KHX2400C15/8G 8GB

Terabyte Co Ltd RCX2-16G3000R 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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SK Hynix HMA451R7MFR8N-TF 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
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内存RAM
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内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
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Corsair CMW64GX4M8X3600C18 8GB
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