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Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4000C16-16GTZR 16GB
比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB vs G Skill Intl F4-4000C16-16GTZR 16GB
总分
Nanya Technology NT4GC64B8HG0NS-CG 4GB
总分
G Skill Intl F4-4000C16-16GTZR 16GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
需要考虑的原因
G Skill Intl F4-4000C16-16GTZR 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
42
左右 -75% 更低的延时
更快的读取速度,GB/s
20.3
9.7
测试中的平均数值
更快的写入速度,GB/s
17.8
6.0
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4000C16-16GTZR 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
24
读取速度,GB/s
9.7
20.3
写入速度,GB/s
6.0
17.8
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1396
4122
Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB
G Skill Intl F4-4000C16-16GTZR 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4000C16-16GTZR 16GB
Kingston 99U5471-030.A00LF 8GB
Avexir Technologies Corporation DDR4-2666 CL17 4GB 4GB
Corsair CML8GX3M2A1866C9 4GB
Lexar Co Limited LD4AU016G-H2666G 16GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMD16GX4M4B2133C10 4GB
Kingston 9905471-071.A00LF 8GB
G Skill Intl F4-3600C17-8GTRG 8GB
Samsung M471B1G73DB0-YK0 8GB
Essencore Limited KD4AGU880-36A180U 16GB
Kingston 99U5474-028.A00LF 4GB
Corsair CMT32GX4M4C3200C14 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology BLS4G4D240FSE.8FE 4GB
Kingston 9905403-437.A01LF 4GB
G Skill Intl F4-4133C19-8GTZRF 8GB
A-DATA Technology ADOVE1A0834E 1GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Kingston 99U5469-045.A00LF 4GB
Kingston 9965662-004.A00G 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Smart Modular SMS4WEC8C1K0446FCG 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston ACR21D4S15HAG/8G 8GB
PNY Electronics PNY 2GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
报告一个错误
×
Bug description
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