Nanya Technology NT4GC64B8HG0NS-CG 4GB vs G Skill Intl F4-4000C17-16GVKB 16GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

G Skill Intl F4-4000C17-16GVKB 16GB

G Skill Intl F4-4000C17-16GVKB 16GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

G Skill Intl F4-4000C17-16GVKB 16GB

需要考虑的原因
G Skill Intl F4-4000C17-16GVKB 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 42

左右 -56% 更低的延时
更快的读取速度，GB/s

22.7 9.7

测试中的平均数值
更快的写入速度，GB/s

18.5 6.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-4000C17-16GVKB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 27
读取速度，GB/s

9.7 22.7
写入速度，GB/s

6.0 18.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1396 4177

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B2G70BH0-YK0 16GB

Samsung M393B2G70BH0-YK0 16GB

G Skill Intl F4-4000C19-8GTZ 8GB

G Skill Intl F4-4000C19-8GTZ 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Crucial Technology BLS16G4D26BFSE.16FE 16GB

Crucial Technology BLS16G4D26BFSE.16FE 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Thermaltake Technology Co Ltd R021D408GX2-3600C18D 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

G Skill Intl F4-2400C15-4GVR 4GB

G Skill Intl F4-2400C15-4GVR 4GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-3466C18-8GSXW 8GB

G Skill Intl F4-3466C18-8GSXW 8GB

Kingston KHX1866C9D3/8GX 8GB

Kingston KHX1866C9D3/8GX 8GB

Crucial Technology BL32G36C16U4BL.M16FB 32GB

Crucial Technology BL32G36C16U4BL.M16FB 32GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

G Skill Intl F4-2800C17-8GIS 8GB

G Skill Intl F4-2800C17-8GIS 8GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3000

Crucial Technology CT102464BD160B.M16 8GB

Crucial Technology CT102464BD160B.M16 8GB

Panram International Corporation PUD42133C138G4NJK 8GB

Panram International Corporation PUD42133C138G4NJK 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F3-2666C12-8GTXD 8GB

G Skill Intl F4-3200C16-16GVS 16GB

G Skill Intl F4-3200C16-16GVS 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

G Skill Intl F4-3200C15-16GTZKY 16GB

G Skill Intl F4-3200C15-16GTZKY 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Corsair CMZ16GX3M2A1866C9 8GB

Corsair CMZ16GX3M2A1866C9 8GB

G Skill Intl F4-3600C16-16GTZR 16GB

G Skill Intl F4-3600C16-16GTZR 16GB