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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Hyundai Inc GP-GR26C16S8K1HU408 8GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Hyundai Inc GP-GR26C16S8K1HU408 8GB

Hyundai Inc GP-GR26C16S8K1HU408 8GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 75
    左右 44% 更低的延时
Hyundai Inc GP-GR26C16S8K1HU408 8GB 需要考虑的原因
Hyundai Inc GP-GR26C16S8K1HU408 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.3 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.3 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 75
  • 读取速度，GB/s
    9.7 left arrow 14.3
  • 写入速度，GB/s
    6.0 left arrow 6.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 1548

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Hyundai Inc GP-GR26C16S8K1HU408 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
G Skill Intl F4-3200C16-32GTRG 32GB
G Skill Intl F4-3200C16-32GTRG 32GB
内存RAM
Ramaxel Technology RMT3160ED58E9W1600 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Essencore Limited KD4AGU880-36A180C 16GB
Essencore Limited KD4AGU880-36A180C 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Corsair CM4X8GD3600C18K2D 8GB
Corsair CM4X8GD3600C18K2D 8GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3600C14-16GVK 16GB
G Skill Intl F4-3600C14-16GVK 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
Crucial Technology CT8G4DFS8213.C8FBD1 8GB
内存RAM
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Maxsun MSD44G24Q0 4GB
Maxsun MSD44G24Q0 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
Micron Technology 72ASS8G72LZ-2G6D2 64GB
内存RAM
Kingston 9905702-010.A00G 8GB
Kingston 9905702-010.A00G 8GB
Essencore Limited KD48GU880-32A160T 8GB
Essencore Limited KD48GU880-32A160T 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
G Skill Intl F4-2400C15-8GTZR 8GB
G Skill Intl F4-2400C15-8GTZR 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston 9965604-008.D00G 16GB
Kingston 9965604-008.D00G 16GB
内存RAM
A-DATA Technology DDR3 1600 4GB
A-DATA Technology DDR3 1600 4GB
Apacer Technology GD2.1542WS.001 8GB
Apacer Technology GD2.1542WS.001 8GB
内存RAM