Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Kingston ACR26D4U9S1KA-4 4GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Kingston ACR26D4U9S1KA-4 4GB

Kingston ACR26D4U9S1KA-4 4GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

Kingston ACR26D4U9S1KA-4 4GB

需要考虑的原因
Kingston ACR26D4U9S1KA-4 4GB

报告一个错误

低于PassMark测试中的延时，ns

33 42

左右 -27% 更低的延时
更快的读取速度，GB/s

14.6 9.7

测试中的平均数值
更快的写入速度，GB/s

11.9 6.0

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Kingston ACR26D4U9S1KA-4 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 33
读取速度，GB/s

9.7 14.6
写入速度，GB/s

6.0 11.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1396 2664

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston KP4T2F-PSB 4GB

Kingston KP4T2F-PSB 4GB

G Skill Intl F4-2800C15-8GTZB 8GB

G Skill Intl F4-2800C15-8GTZB 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology BLS8G4D240FSC.16FBR2 8GB

Crucial Technology BLS8G4D240FSC.16FBR2 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Micron Technology M471A1K43BB1-CRC 8GB

Micron Technology M471A1K43BB1-CRC 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Corsair CMK16GX4M4B3733C17 4GB

Corsair CMK16GX4M4B3733C17 4GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Kllisre DDR4-8GB 8GB

Kllisre DDR4-8GB 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8G

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Corsair CM4X8GF3000C15K4 8GB

Corsair CM4X8GF3000C15K4 8GB

Protocol Engines Kingrock 800 2GB 2GB

Protocol Engines Kingrock 800 2GB 2GB

Wilk Elektronik S.A. GR2133D464L15/8G 8GB

Wilk Elektronik S.A. GR2133D464L15/8G 8GB

Kingston KHX1600C9D3/4GX 4GB

Kingston KHX1600C9D3/4GX 4GB

Samsung M378A1K43BB1-CRC 8GB

Samsung M378A1K43BB1-CRC 8GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

A-DATA Technology AM1U16BC4P2-B19H 4GB

Corsair CMWX8GD3000C15W4 8GB

Corsair CMWX8GD3000C15W4 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-3200C15-8GTZSW 8GB

G Skill Intl F4-3200C15-8GTZSW 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4DFD8213.M16FA 8GB

Crucial Technology CT8G4DFD8213.M16FA 8GB