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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston XW21KG-MIE-NX 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Kingston XW21KG-MIE-NX 8GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分
star star star star star
Kingston XW21KG-MIE-NX 8GB

Kingston XW21KG-MIE-NX 8GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB
报告一个错误
Kingston XW21KG-MIE-NX 8GB 需要考虑的原因
Kingston XW21KG-MIE-NX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 42
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 9.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.4 left arrow 6.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston XW21KG-MIE-NX 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 39
  • 读取速度，GB/s
    9.7 left arrow 16.5
  • 写入速度，GB/s
    6.0 left arrow 10.4
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1396 left arrow 2680

Nanya Technology NT4GC64B8HG0NS-CG 4GB RAM的比较

Corsair CMY8GX3M2A2666C10 4GB
Corsair CMSO4GX3M1A1333C9 4GB

Kingston XW21KG-MIE-NX 8GB RAM的比较

Kingston 9905471-002.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Corsair CMD32GX4M2C3200C16 16GB
Corsair CMD32GX4M2C3200C16 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Crucial Technology CT4G4DFS824A.C8FHP 4GB
Crucial Technology CT4G4DFS824A.C8FHP 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT8G4SFS632A 8GB
Crucial Technology CT8G4SFS632A 8GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Kingston KHX2400C15D4/16GX 16GB
Kingston KHX2400C15D4/16GX 16GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
Crucial Technology BLS16G4D26BFSB.16FBR 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-3600C16-16GTRGC 16GB
G Skill Intl F4-3600C16-16GTRGC 16GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Panram International Corporation M424016 4GB
Panram International Corporation M424016 4GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M391A1G43DB0-CPB 8GB
Samsung M391A1G43DB0-CPB 8GB
内存RAM
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMX8GX3M2A2000C9 4GB
Kingston CBD24D4S7D8MA-16 16GB
Kingston CBD24D4S7D8MA-16 16GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB
Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB
内存RAM
Elpida EBJ40EG8BFWB-JS-F 4GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Essencore Limited IM48GU48A30-GIIHM 8GB
Essencore Limited IM48GU48A30-GIIHM 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
Crucial Technology CT16G4SFD8266 16GB
Crucial Technology CT16G4SFD8266 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
Kllisre 8ATF1G64AZ-2G6H1 8GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-2133C15-4GRR 4GB
G Skill Intl F4-2133C15-4GRR 4GB
内存RAM