Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Micron Technology 9ASF51272PZ-2G1AX 4GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

更快的读取速度，GB/s

9.7 7.7

测试中的平均数值

Micron Technology 9ASF51272PZ-2G1AX 4GB

需要考虑的原因
Micron Technology 9ASF51272PZ-2G1AX 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 42

左右 -8% 更低的延时
更快的写入速度，GB/s

6.8 6.0

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 39
读取速度，GB/s

9.7 7.7
写入速度，GB/s

6.0 6.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1396 1768

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M2B3600C18 8GB

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Kingmax Semiconductor KLDE88F-B8MO5 2GB

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G Skill Intl F4-3200C14-16GTZ 16GB

SK Hynix DDR2 800 2G 2GB

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Micron Technology 18ASF1G72PDZ-2G3B1 8GB

Micron Technology 18ASF1G72PDZ-2G3B1 8GB