Nanya Technology NT4GC64B8HG0NS-CG 4GB vs Samsung M386A8K40CM2-CRC 64GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

Samsung M386A8K40CM2-CRC 64GB

Samsung M386A8K40CM2-CRC 64GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

更快的读取速度，GB/s

9.7 8.2

测试中的平均数值
更快的写入速度，GB/s

6.0 5.4

测试中的平均数值

Samsung M386A8K40CM2-CRC 64GB

需要考虑的原因
Samsung M386A8K40CM2-CRC 64GB

报告一个错误

低于PassMark测试中的延时，ns

41 42

左右 -2% 更低的延时
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Samsung M386A8K40CM2-CRC 64GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 41
读取速度，GB/s

9.7 8.2
写入速度，GB/s

6.0 5.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1396 1704

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLM16G40C18U4B.M8FB1 16GB

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Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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G Skill Intl F4-4000C14-16GTZR 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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Kingmax Semiconductor GSAH22F-18---------- 16GB

Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

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SK Hynix HMAA2GS6AJR8N-XN 16GB

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G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F4-3000C14-16GVKD 16GB

G Skill Intl F4-3000C14-16GVKD 16GB

A-DATA Technology ADOVF1B163BEG 2GB

A-DATA Technology ADOVF1B163BEG 2GB

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Kingston 9905678-102.A00G 8GB

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Kingston 99U5471-037.A00LF 8GB

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G Skill Intl F4-2400C17-8GSXK 8GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMW64GX4M4E3200C16 16GB

Corsair CMW64GX4M4E3200C16 16GB