Nanya Technology NT4GC64B8HG0NS-CG 4GB vs V-Color Technology Inc. TD8G16C16-UHK 8GB

总分

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

总分

V-Color Technology Inc. TD8G16C16-UHK 8GB

V-Color Technology Inc. TD8G16C16-UHK 8GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-CG 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-CG 4GB

报告一个错误

V-Color Technology Inc. TD8G16C16-UHK 8GB

需要考虑的原因
V-Color Technology Inc. TD8G16C16-UHK 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 42

左右 -91% 更低的延时
更快的读取速度，GB/s

17.9 9.7

测试中的平均数值
更快的写入速度，GB/s

14.5 6.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-CG 4GB

V-Color Technology Inc. TD8G16C16-UHK 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 22
读取速度，GB/s

9.7 17.9
写入速度，GB/s

6.0 14.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 12 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1396 3204

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Apacer Technology 78.C1GMM.AUC0B 8GB

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Crucial Technology CT51264BA1339.M16F 4GB

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Corsair CMD16GX4M2C3333C16 8GB

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Corsair CMZ16GX3M2A2400C10 8GB

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Crucial Technology CT16G4SFD824A.C16FDD 16GB

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SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB

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Samsung M393B2G70BH0-CK0 16GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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Corsair CMK32GX4M2D3000C16 16GB

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Nanya Technology M2Y51264TU88B0B-3C 512MB

Samsung V-GeN D4S4GL32A8TL 4GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

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Corsair CMK16GX4M4B3300C16 4GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

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