Nanya Technology M2Y51264TU88B0B-3C 512MB vs Samsung V-GeN D4S4GL32A8TL 4GB

总分

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

总分

Samsung V-GeN D4S4GL32A8TL 4GB

Samsung V-GeN D4S4GL32A8TL 4GB

差异规格评论

差异

Nanya Technology M2Y51264TU88B0B-3C 512MB

需要考虑的原因
Nanya Technology M2Y51264TU88B0B-3C 512MB

报告一个错误

低于PassMark测试中的延时，ns

54 58

左右 7% 更低的延时
更快的读取速度，GB/s

3 18.5

测试中的平均数值

Samsung V-GeN D4S4GL32A8TL 4GB

需要考虑的原因
Samsung V-GeN D4S4GL32A8TL 4GB

报告一个错误

更快的写入速度，GB/s

9.5 1,308.1

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Nanya Technology M2Y51264TU88B0B-3C 512MB

Samsung V-GeN D4S4GL32A8TL 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

54 58
读取速度，GB/s

3,573.5 18.5
写入速度，GB/s

1,308.1 9.5
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

371 1998

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M391B5673FH0-CH9 2GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

Smart Modular SMU4WEC8C1K0464FCG 8GB

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Micron Technology 16JSF25664HZ-1G1F1 2GB

Heoriady HX2666DT8G-TD 8GB

Heoriady HX2666DT8G-TD 8GB

Mushkin 991988 (996988) 4GB

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Panram International Corporation PUD42400C154G2NJK 4GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

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G Skill Intl F3-10600CL9-2GBNT 2GB

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