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Nanya Technology NT4GC64B8HG0NS-DI 4GB
A-DATA Technology AD73I1C1674EV 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB vs A-DATA Technology AD73I1C1674EV 4GB

总分
star star star star star
Nanya Technology NT4GC64B8HG0NS-DI 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

总分
star star star star star
A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

差异 规格 评论

差异

Nanya Technology NT4GC64B8HG0NS-DI 4GB 需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-DI 4GB
报告一个错误
  • 更快的读取速度，GB/s
    13 left arrow 11.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.0 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
A-DATA Technology AD73I1C1674EV 4GB 需要考虑的原因
A-DATA Technology AD73I1C1674EV 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    40 left arrow 45
    左右 -13% 更低的延时

规格

完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-DI 4GB
A-DATA Technology AD73I1C1674EV 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    45 left arrow 40
  • 读取速度，GB/s
    13.0 left arrow 11.3
  • 写入速度，GB/s
    9.0 left arrow 7.5
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2079 left arrow 1654

Nanya Technology NT4GC64B8HG0NS-DI 4GB RAM的比较

SK Hynix HMA42GR7AFR4N-TF 16GB
Crucial Technology BL8G32C16S4B.8FE 8GB

A-DATA Technology AD73I1C1674EV 4GB RAM的比较

Samsung M471B5273EB0-CK0 4GB
KingSpec KingSpec 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Nanya Technology NT4GC64B8HG0NS-DI 4GB
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内存RAM
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