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Nanya Technology M2N1G64TUH8D5F-AC 1GB
V-GEN D4H4GS24A8 4GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB vs V-GEN D4H4GS24A8 4GB

总分
star star star star star
Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

总分
star star star star star
V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

差异 规格 评论

差异

Nanya Technology M2N1G64TUH8D5F-AC 1GB 需要考虑的原因
Nanya Technology M2N1G64TUH8D5F-AC 1GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    92 left arrow 94
    左右 2% 更低的延时
  • 更快的读取速度，GB/s
    2 left arrow 14.7
    测试中的平均数值
V-GEN D4H4GS24A8 4GB 需要考虑的原因
V-GEN D4H4GS24A8 4GB
报告一个错误
  • 更快的写入速度，GB/s
    7.9 left arrow 1,266.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Nanya Technology M2N1G64TUH8D5F-AC 1GB
V-GEN D4H4GS24A8 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    92 left arrow 94
  • 读取速度，GB/s
    2,105.4 left arrow 14.7
  • 写入速度，GB/s
    1,266.1 left arrow 7.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    339 left arrow 1506

Nanya Technology M2N1G64TUH8D5F-AC 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564S64CP6-Y5 512MB
Kingston 9905744-067.A00G 32GB

V-GEN D4H4GS24A8 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
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V-GEN D4H4GS24A8 4GB
内存RAM
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