Nanya Technology NT4GC64B8HG0NS-DI 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

总分

Nanya Technology NT4GC64B8HG0NS-DI 4GB

Nanya Technology NT4GC64B8HG0NS-DI 4GB

总分

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

差异规格评论

差异

Nanya Technology NT4GC64B8HG0NS-DI 4GB

需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-DI 4GB

报告一个错误

更快的读取速度，GB/s

13 8.8

测试中的平均数值
更快的写入速度，GB/s

9.0 5.6

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21% 更高的带宽

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 45

左右 -50% 更低的延时

规格

完整的技术规格清单

Nanya Technology NT4GC64B8HG0NS-DI 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

45 30
读取速度，GB/s

13.0 8.8
写入速度，GB/s

9.0 5.6
内存带宽，mbps

12800 10600

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
时序/时钟速度

9-9-9-24 / 1600 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2079 1344

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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