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Nanya Technology NT4GC64B8HG0NS-DI 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
比较
Nanya Technology NT4GC64B8HG0NS-DI 4GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB
总分
Nanya Technology NT4GC64B8HG0NS-DI 4GB
总分
Micron Technology 4ATF51264HZ-2G3B1 4GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT4GC64B8HG0NS-DI 4GB
报告一个错误
需要考虑的原因
Micron Technology 4ATF51264HZ-2G3B1 4GB
报告一个错误
低于PassMark测试中的延时,ns
35
45
左右 -29% 更低的延时
更快的读取速度,GB/s
14.8
13
测试中的平均数值
更快的写入速度,GB/s
11.2
9.0
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
45
35
读取速度,GB/s
13.0
14.8
写入速度,GB/s
9.0
11.2
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2079
2336
Nanya Technology NT4GC64B8HG0NS-DI 4GB RAM的比较
SK Hynix HMA42GR7AFR4N-TF 16GB
Crucial Technology BL8G32C16S4B.8FE 8GB
Micron Technology 4ATF51264HZ-2G3B1 4GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT4GC64B8HG0NS-DI 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Samsung M471A5244BB0-CRC 4GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston 9905713-004.A00G 4GB
SpecTek Incorporated ?????????????????? 2GB
Kingston 9905744-067.A00G 32GB
Samsung M393B1G70BH0-CK0 8GB
Team Group Inc. TEAMGROUP-SD4-2666 16GB
Kingston 99U5474-010.A00LF 2GB
King Tiger Technology Tigo-2400MHz-4G 4GB
Samsung M393B1K70CH0-CH9 8GB
Kingston KHX2400C12D4/16GX 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston X2YH1K-MIE-NX 16GB
A-DATA Technology DQKD1A08 1GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
A-DATA Technology AD73I1B1672EG 2GB
Kingston 9905702-150.A00G 8GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 9905625-004.A03LF 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9965596-016.B01G 8GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Asgard VMA41UF-MEC1U2BQ2 4GB
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3600C17-16GTZSW 16GB
报告一个错误
×
Bug description
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