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Nanya Technology NT4GC64C88B1NS-DI 4GB
Essencore Limited KD48GU880-34A170X 8GB

Nanya Technology NT4GC64C88B1NS-DI 4GB vs Essencore Limited KD48GU880-34A170X 8GB

总分
star star star star star
Nanya Technology NT4GC64C88B1NS-DI 4GB

Nanya Technology NT4GC64C88B1NS-DI 4GB

总分
star star star star star
Essencore Limited KD48GU880-34A170X 8GB

Essencore Limited KD48GU880-34A170X 8GB

差异 规格 评论

差异

Nanya Technology NT4GC64C88B1NS-DI 4GB 需要考虑的原因
Nanya Technology NT4GC64C88B1NS-DI 4GB
报告一个错误
Essencore Limited KD48GU880-34A170X 8GB 需要考虑的原因
Essencore Limited KD48GU880-34A170X 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 28
    左右 -33% 更低的延时
  • 更快的读取速度，GB/s
    18.9 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.9 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64C88B1NS-DI 4GB
Essencore Limited KD48GU880-34A170X 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 21
  • 读取速度，GB/s
    12.8 left arrow 18.9
  • 写入速度，GB/s
    8.4 left arrow 15.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2226 left arrow 3549

Nanya Technology NT4GC64C88B1NS-DI 4GB RAM的比较

Ramaxel Technology RMT3170ME68F9F1600 4GB
Kingston 9905622-025.A00G 4GB

Essencore Limited KD48GU880-34A170X 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC64C88B1NS-DI 4GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
Essencore Limited KD48GU880-34A170X 8GB
Essencore Limited KD48GU880-34A170X 8GB
内存RAM
Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
Crucial Technology CT8G4SFS6266.M4FB 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Lenovo LMKU8G68AHFHD-32A 8GB
Lenovo LMKU8G68AHFHD-32A 8GB
内存RAM
AMD AE34G2139U2 4GB
AMD AE34G2139U2 4GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
Micron Technology 8ATF1G64HZ-2G3B2 8GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BLS8G4D240FSE.16FAR 8GB
Crucial Technology BLS8G4D240FSE.16FAR 8GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
Corsair CM4B8G1J2800K14K 8GB
Corsair CM4B8G1J2800K14K 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
Kingston 9905734-059.A00G 16GB
Kingston 9905734-059.A00G 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
V-Color Technology Inc. TN48G24S817-VHA/R 8GB
内存RAM
Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Apacer Technology D12.2324CS.001 8GB
Apacer Technology D12.2324CS.001 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
Patriot Memory (PDP Systems) 2800 C18 Series 16GB
内存RAM
Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N-UH 32GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7AMR4N
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
G Skill Intl F4-3200C15-16GVK 16GB
G Skill Intl F4-3200C15-16GVK 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Corsair CMK64GX4M8X3600C18 8GB
Corsair CMK64GX4M8X3600C18 8GB
内存RAM