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Nanya Technology NT4GC64C88B1NS-DI 4GB
Samsung M393A5143DB0-CRC 4GB

Nanya Technology NT4GC64C88B1NS-DI 4GB vs Samsung M393A5143DB0-CRC 4GB

总分
star star star star star
Nanya Technology NT4GC64C88B1NS-DI 4GB

Nanya Technology NT4GC64C88B1NS-DI 4GB

总分
star star star star star
Samsung M393A5143DB0-CRC 4GB

Samsung M393A5143DB0-CRC 4GB

差异 规格 评论

差异

Nanya Technology NT4GC64C88B1NS-DI 4GB 需要考虑的原因
Nanya Technology NT4GC64C88B1NS-DI 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 47
    左右 40% 更低的延时
  • 更快的读取速度，GB/s
    12.8 left arrow 10
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.4 left arrow 7.5
    测试中的平均数值
Samsung M393A5143DB0-CRC 4GB 需要考虑的原因
Samsung M393A5143DB0-CRC 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 12800
    左右 1.5 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC64C88B1NS-DI 4GB
Samsung M393A5143DB0-CRC 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 47
  • 读取速度，GB/s
    12.8 left arrow 10.0
  • 写入速度，GB/s
    8.4 left arrow 7.5
  • 内存带宽，mbps
    12800 left arrow 19200
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2226 left arrow 2308

Nanya Technology NT4GC64C88B1NS-DI 4GB RAM的比较

Ramaxel Technology RMT3170ME68F9F1600 4GB
Kingston 9905622-025.A00G 4GB

Samsung M393A5143DB0-CRC 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Avant Technology W641GU42J7240NC 8GB
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Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
Maxsun MSD44G24Q3 4GB
Maxsun MSD44G24Q3 4GB
内存RAM
Nanya Technology NT4GC64C88B1NS-DI 4GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
Samsung M393A5143DB0-CRC 4GB
Samsung M393A5143DB0-CRC 4GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
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Mushkin 991988 (996988) 4GB
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内存RAM
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SK Hynix HYMP125U64CP8-S6 2GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
Patriot Memory (PDP Systems) 4400 C18 Series 8GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
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Micron Technology 18ASF2G72AZ-2G6D1 16GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
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SK Hynix HMA84GR7MFR4N-UH 32GB
内存RAM
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SK Hynix HMT325U6CFR8C-PB 2GB
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Kingston 9905624-008.A00G 8GB
内存RAM
SpecTek Incorporated ?????????????????? 2GB
SpecTek Incorporated ?????????????????? 2GB
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内存RAM
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内存RAM
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Corsair CMV8GX4M1A2133C15 8GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
Micron Technology 8ATF1G64AZ-2G6D1 8GB
内存RAM