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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK128GX4M8A2400C14 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Corsair CMK128GX4M8A2400C14 16GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
Corsair CMK128GX4M8A2400C14 16GB

Corsair CMK128GX4M8A2400C14 16GB

差异 规格 评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB 需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
Corsair CMK128GX4M8A2400C14 16GB 需要考虑的原因
Corsair CMK128GX4M8A2400C14 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 42
    左右 -31% 更低的延时
  • 更快的读取速度，GB/s
    15.1 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK128GX4M8A2400C14 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 32
  • 读取速度，GB/s
    10.6 left arrow 15.1
  • 写入速度，GB/s
    7.8 left arrow 11.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 3306

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

Corsair CMK128GX4M8A2400C14 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMK128GX4M8A2400C14 16GB
Corsair CMK128GX4M8A2400C14 16GB
内存RAM
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
Smart Modular SMS4WEC8C2K0446FCG 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6AFR8N
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
SK Hynix HMA82GS6AFRFR-UH 16GB
SK Hynix HMA82GS6AFRFR-UH 16GB
内存RAM
Samsung M393B5170FH0-CH9 4GB
Samsung M393B5170FH0-CH9 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
Crucial Technology CT4G4DFS8266.C8FE 4GB
内存RAM
Kingston 9905403-174.A00LF 2GB
Kingston 9905403-174.A00LF 2GB
Corsair CMW8GX4M1Z3200C16 8GB
Corsair CMW8GX4M1Z3200C16 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
G Skill Intl F4-3200C16-8GRS 8GB
G Skill Intl F4-3200C16-8GRS 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
G Skill Intl F4-4000C19-8GTZ 8GB
G Skill Intl F4-4000C19-8GTZ 8GB
内存RAM
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR16D3LS1NGG/2G 2GB
Kingston ACR32D4S2S1ME-8 8GB
Kingston ACR32D4S2S1ME-8 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
G Skill Intl F4-2666C18-32GRS 32GB
G Skill Intl F4-2666C18-32GRS 32GB
内存RAM
SK Hynix HMT351R7EFR8C-RD 4GB
SK Hynix HMT351R7EFR8C-RD 4GB
Shenzhen Technology Co Ltd 8GB
Shenzhen Technology Co Ltd 8GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
Avexir Technologies Corporation DDR4-2800 CL15 8GB 8GB
内存RAM
Samsung M393B2G70BH0-CH9 16GB
Samsung M393B2G70BH0-CH9 16GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
内存RAM