Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Corsair CMSX8GX4M2A2666C18 4GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

Corsair CMSX8GX4M2A2666C18 4GB

Corsair CMSX8GX4M2A2666C18 4GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

Corsair CMSX8GX4M2A2666C18 4GB

需要考虑的原因
Corsair CMSX8GX4M2A2666C18 4GB

报告一个错误

低于PassMark测试中的延时，ns

30 42

左右 -40% 更低的延时
更快的读取速度，GB/s

17.6 10.6

测试中的平均数值
更快的写入速度，GB/s

12.9 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMSX8GX4M2A2666C18 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 30
读取速度，GB/s

10.6 17.6
写入速度，GB/s

7.8 12.9
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2150 2460

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DPT5MK8-TATP 2GB

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Micron Technology 4ATF51264AZ-2G6E1 4GB

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SK Hynix HYMP164U64CP6-Y5 512MB

SK Hynix HYMP164U64CP6-Y5 512MB

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Kingston KDK8NX-MIE 16GB

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Kingston 9965525-144.A00LF 8GB

Kingston KF2666C16S4/16G 16GB

Kingston KF2666C16S4/16G 16GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-3600C18-16GTRS 16GB

G Skill Intl F4-3600C18-16GTRS 16GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-2400 CL16 4GB 4GB