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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Crucial Technology BLS8G4D26BFSCK.8FD 8GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
Crucial Technology BLS8G4D26BFSCK.8FD 8GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB

差异 规格 评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB 需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
Crucial Technology BLS8G4D26BFSCK.8FD 8GB 需要考虑的原因
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 42
    左右 -45% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 29
  • 读取速度，GB/s
    10.6 left arrow 17.0
  • 写入速度，GB/s
    7.8 left arrow 12.6
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 3140

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

Crucial Technology BLS8G4D26BFSCK.8FD 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
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Crucial Technology BLS8G4D26BFSCK.8FD 8GB
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Corsair CML16GX3M2A1600C10 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Hoodisk Electronics Co Ltd GKE320UD204808-2666 32GB
内存RAM
Kingston KHX1600C9S3L/8G 8GB
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