Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Crucial Technology BLS8G4S240FSD.16FBD 8GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

Crucial Technology BLS8G4S240FSD.16FBD 8GB

Crucial Technology BLS8G4S240FSD.16FBD 8GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

Crucial Technology BLS8G4S240FSD.16FBD 8GB

需要考虑的原因
Crucial Technology BLS8G4S240FSD.16FBD 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 42

左右 -24% 更低的延时
更快的读取速度，GB/s

15.5 10.6

测试中的平均数值
更快的写入速度，GB/s

12.2 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Crucial Technology BLS8G4S240FSD.16FBD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 34
读取速度，GB/s

10.6 15.5
写入速度，GB/s

7.8 12.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2150 2963

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Crucial Technology BLS8G4S240FSD.16FBD 8GB

Crucial Technology BLS8G4S240FSD.16FBD 8GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Kingston 9905678-029.A00G 8GB

Kingston 9905678-029.A00G 8GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

Kingston 9905678-024.A00G 4GB

Kingston 9905678-024.A00G 4GB

Strontium EVMT8G1600U86S 8GB

Strontium EVMT8G1600U86S 8GB

Patriot Memory (PDP Systems) PSD44G240081S 4GB

Patriot Memory (PDP Systems) PSD44G240081S 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F4-2133C15-4GRR 4GB

G Skill Intl F4-2133C15-4GRR 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Kingston 99U5665-004.A00G 4GB

Kingston 99U5665-004.A00G 4GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Gloway International (HK) STK4U2400D17082C 8GB

Gloway International (HK) STK4U2400D17082C 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

G Skill Intl F4-3600C18-16GTZN 16GB

G Skill Intl F4-3600C18-16GTZN 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

G Skill Intl F4-2800C15-8GRK 8GB

G Skill Intl F4-2800C15-8GRK 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston 9932301-P01.A00G 4GB

Kingston 9932301-P01.A00G 4GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

G Skill Intl F4-2800C17-8GVR 8GB

G Skill Intl F4-2800C17-8GVR 8GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Apacer Technology 78.BAGP4.AR50C 4GB

Apacer Technology 78.BAGP4.AR50C 4GB