Patriot Memory (PDP Systems) PSD22G8002 2GB vs Micron Technology 8ATF51264AZ-2G1A1 4GB

总分

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

总分

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD22G8002 2GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD22G8002 2GB

报告一个错误

更快的读取速度，GB/s

4 12.2

测试中的平均数值

Micron Technology 8ATF51264AZ-2G1A1 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1A1 4GB

报告一个错误

低于PassMark测试中的延时，ns

43 60

左右 -40% 更低的延时
更快的写入速度，GB/s

9.7 2,109.3

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD22G8002 2GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

60 43
读取速度，GB/s

4,162.7 12.2
写入速度，GB/s

2,109.3 9.7
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

784 2501

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung F6451U64F9333G 4GB

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PUSKILL DDR3 1600 8G 8GB

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King Tiger Technology TMKU8G868-240U 8GB

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Patriot Memory (PDP Systems) PSD22G8002 2GB

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Micron Technology 8ATF51264AZ-2G1A1 4GB

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Corsair CMW64GX4M4Z2933C16 16GB

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G Skill Intl F3-1866C8-8GTX 8GB

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Wilk Elektronik S.A. IRH2666D464L19/16G 16GB

Samsung M378B5273DH0-CK0 4GB

Samsung M378B5273DH0-CK0 4GB

SK Hynix HMT125U6TFR8C-H9 2GB

SK Hynix HMT125U6TFR8C-H9 2GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666 16GB

Chun Well Technology Holding Limited CL19-19-19 D4-2666

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Corsair CMK16GX4M2D2400C14 8GB