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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT8G4SFD824A.M16FB 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Crucial Technology CT8G4SFD824A.M16FB 8GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
Crucial Technology CT8G4SFD824A.M16FB 8GB

Crucial Technology CT8G4SFD824A.M16FB 8GB

差异 规格 评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB 需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
Crucial Technology CT8G4SFD824A.M16FB 8GB 需要考虑的原因
Crucial Technology CT8G4SFD824A.M16FB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 42
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    16.5 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.1 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 28
  • 读取速度，GB/s
    10.6 left arrow 16.5
  • 写入速度，GB/s
    7.8 left arrow 13.1
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 2741

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

Crucial Technology CT8G4SFD824A.M16FB 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK32GX4M4B3866C18 8GB
Corsair CMK32GX4M4B3866C18 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Transcend Information TS2GLH64V4B 16GB
Transcend Information TS2GLH64V4B 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT8G4DFS824A.M8FA 8GB
Crucial Technology CT8G4DFS824A.M8FA 8GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Golden Empire CL16-16-16 D4-2400 8GB
Golden Empire CL16-16-16 D4-2400 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3200C15-8GTZSK 8GB
G Skill Intl F4-3200C15-8GTZSK 8GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Apacer Technology 78.CAGPP.ARW0B 8GB
Apacer Technology 78.CAGPP.ARW0B 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Kingston X300KG-HYA 4GB
Kingston X300KG-HYA 4GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-3600C16-8GTZRC 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Asgard VML41UG-MIC1U22T1 8GB
Asgard VML41UG-MIC1U22T1 8GB
内存RAM
Kingston 99U5403-492.A00LF 8GB
Kingston 99U5403-492.A00LF 8GB
G Skill Intl F4-3200C14-8GTZRX 8GB
G Skill Intl F4-3200C14-8GTZRX 8GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
G Skill Intl F4-3200C14-16GTZKO 16GB
G Skill Intl F4-3200C14-16GTZKO 16GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-3600C18-32GTRG 32GB
G Skill Intl F4-3600C18-32GTRG 32GB
内存RAM