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Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2133C15-8GNS 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs G Skill Intl F4-2133C15-8GNS 8GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
G Skill Intl F4-2133C15-8GNS 8GB

G Skill Intl F4-2133C15-8GNS 8GB

差异 规格 评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB 需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
G Skill Intl F4-2133C15-8GNS 8GB 需要考虑的原因
G Skill Intl F4-2133C15-8GNS 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 42
    左右 -62% 更低的延时
  • 更快的读取速度，GB/s
    14.3 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.9 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2133C15-8GNS 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 26
  • 读取速度，GB/s
    10.6 left arrow 14.3
  • 写入速度，GB/s
    7.8 left arrow 8.9
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 2384

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

G Skill Intl F4-2133C15-8GNS 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Kingston 9905625-097.A00G 16GB
Kingston 9905625-097.A00G 16GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2133C15-8GNS 8GB
G Skill Intl F4-2133C15-8GNS 8GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Transcend Information JM2666HLG-16GK 8GB
Transcend Information JM2666HLG-16GK 8GB
内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
V-GEN D4H4GS24A8 4GB
V-GEN D4H4GS24A8 4GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9905678-121.A00G 8GB
Kingston 9905678-121.A00G 8GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston 9905598-044.A00G 16GB
Kingston 9905598-044.A00G 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
Ramaxel Technology RMUA5110MB78HAF2400 8GB
内存RAM
Apacer Technology 78.CAGR4.40C0B 8GB
Apacer Technology 78.CAGR4.40C0B 8GB
Essencore Limited 8GBF1X08QFHH38-135-K 8GB
Essencore Limited 8GBF1X08QFHH38-135-K 8GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston KGTWW1-MIE 4GB
Kingston KGTWW1-MIE 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
A-DATA Technology AO2P21FC8R2-BRGS 8GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
InnoDisk Corporation M4S0-AGS1O5IK 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
InnoDisk Corporation M4SI-BGS2OC0K-A 32GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Kingston 9905630-051.A00G 16GB
Kingston 9905630-051.A00G 16GB
内存RAM