Samsung M471B5273DH0-CH9 4GB vs V-GEN D4H4GS24A8 4GB

总分

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

总分

V-GEN D4H4GS24A8 4GB

V-GEN D4H4GS24A8 4GB

差异规格评论

差异

Samsung M471B5273DH0-CH9 4GB

需要考虑的原因
Samsung M471B5273DH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

47 94

左右 50% 更低的延时

V-GEN D4H4GS24A8 4GB

需要考虑的原因
V-GEN D4H4GS24A8 4GB

报告一个错误

更快的读取速度，GB/s

14.7 9.3

测试中的平均数值
更快的写入速度，GB/s

7.9 5.9

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273DH0-CH9 4GB

V-GEN D4H4GS24A8 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

47 94
读取速度，GB/s

9.3 14.7
写入速度，GB/s

5.9 7.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1413 1506

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273DH0-CH9 4GB

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Crucial Technology BL8G32C16U4B.8FE 8GB

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Apacer Technology 78.BAGN8.AZC0B 4GB

Crucial Technology CT8G4DFRA266.C4FE 8GB

Crucial Technology CT8G4DFRA266.C4FE 8GB

Micron Technology 8ATF1G64AZ-2G6D1 8GB

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Crucial Technology CT8G4DFS8213.M8FB 8GB