Nanya Technology NT4GC72B4NA1NL-CG 4GB vs G Skill Intl F4-2400C16-16GFX 16GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

G Skill Intl F4-2400C16-16GFX 16GB

G Skill Intl F4-2400C16-16GFX 16GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

低于PassMark测试中的延时，ns

42 53

左右 21% 更低的延时

G Skill Intl F4-2400C16-16GFX 16GB

需要考虑的原因
G Skill Intl F4-2400C16-16GFX 16GB

报告一个错误

更快的读取速度，GB/s

14 10.6

测试中的平均数值
更快的写入速度，GB/s

12.0 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

G Skill Intl F4-2400C16-16GFX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 53
读取速度，GB/s

10.6 14.0
写入速度，GB/s

7.8 12.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2150 3020

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393B1K70CH0-CH9 8GB

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Samsung M471B5273CH0-CH9 4GB

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Kingston ACR26D4U9S8HJ-8 8GB

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Samsung M393B1K70CH0-CH9 8GB

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A-DATA Technology AD73I1C1674EV 4GB

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Crucial Technology CT8G4DFS824A.M8FGM 8GB

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Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Golden Empire CL16-16-16 D4-3000 4GB

Golden Empire CL16-16-16 D4-3000 4GB

Team Group Inc. Team-Value-800 2GB

Team Group Inc. Team-Value-800 2GB

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Crucial Technology BLS8G4D240FSBK.8FD 8GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

Crucial Technology BLS8G4D240FSB.16FBD 8GB

Crucial Technology BLS8G4D240FSB.16FBD 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

G Skill Intl F4-4266C19-8GTZKW 8GB

G Skill Intl F4-4266C19-8GTZKW 8GB