Samsung M393B1K70CH0-CH9 8GB vs G Skill Intl F4-2400C16-8GRS 8GB

总分

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

总分

G Skill Intl F4-2400C16-8GRS 8GB

G Skill Intl F4-2400C16-8GRS 8GB

差异规格评论

差异

Samsung M393B1K70CH0-CH9 8GB

需要考虑的原因
Samsung M393B1K70CH0-CH9 8GB

报告一个错误

G Skill Intl F4-2400C16-8GRS 8GB

需要考虑的原因
G Skill Intl F4-2400C16-8GRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 44

左右 -29% 更低的延时
更快的读取速度，GB/s

15.4 11.2

测试中的平均数值
更快的写入速度，GB/s

11.9 8.1

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-2400C16-8GRS 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

44 34
读取速度，GB/s

11.2 15.4
写入速度，GB/s

8.1 11.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2293 2780

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Crucial Technology CT8G4DFS824A.M8FGM 8GB

Crucial Technology CT8G4DFS824A.M8FGM 8GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Golden Empire CL16-16-16 D4-3000 4GB

Golden Empire CL16-16-16 D4-3000 4GB

Team Group Inc. Team-Value-800 2GB

Team Group Inc. Team-Value-800 2GB

G Skill Intl F4-2666C15-4GVK 4GB

G Skill Intl F4-2666C15-4GVK 4GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

Crucial Technology BLS8G4D240FSBK.8FD 8GB

Crucial Technology BLS8G4D240FSB.16FBD 8GB

Crucial Technology BLS8G4D240FSB.16FBD 8GB

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

G Skill Intl F4-4266C19-8GTZKW 8GB

G Skill Intl F4-4266C19-8GTZKW 8GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Hynix Semiconductor (Hyundai Electronics) HMT112S6BFR6C-H9 1GB

Hynix Semiconductor (Hyundai Electronics) HMT112S6BFR6C

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Corsair CMSX32GX4M2A2400C16 16GB

Corsair CMSX32GX4M2A2400C16 16GB

Micron Technology 16JSF51264HZ-1G4D1 4GB

Micron Technology 16JSF51264HZ-1G4D1 4GB

A-DATA Technology AM1L16BC4R1-B1HS 4GB

A-DATA Technology AM1L16BC4R1-B1HS 4GB

Kingston 99U5584-017.A00LF 4GB

Kingston 99U5584-017.A00LF 4GB

G Skill Intl F4-3600C16-8GTRGC 8GB

G Skill Intl F4-3600C16-8GTRGC 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Kingston KHX2400C15D4/16GX 16GB

Kingston KHX2400C15D4/16GX 16GB

Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Corsair MK16GX44A2666C16 4GB

Corsair MK16GX44A2666C16 4GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Crucial Technology CT8G4SFS8213.M8FB 8GB

Crucial Technology CT8G4SFS8213.M8FB 8GB