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Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2400C17-8GDBVR 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs G Skill Intl F4-2400C17-8GDBVR 8GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
G Skill Intl F4-2400C17-8GDBVR 8GB

G Skill Intl F4-2400C17-8GDBVR 8GB

差异 规格 评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB 需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
G Skill Intl F4-2400C17-8GDBVR 8GB 需要考虑的原因
G Skill Intl F4-2400C17-8GDBVR 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 42
    左右 -91% 更低的延时
  • 更快的读取速度，GB/s
    18.3 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2400C17-8GDBVR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 22
  • 读取速度，GB/s
    10.6 left arrow 18.3
  • 写入速度，GB/s
    7.8 left arrow 12.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 3122

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

G Skill Intl F4-2400C17-8GDBVR 8GB RAM的比较

Smart Modular SH564128FH8NZQNSCG 4GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
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TwinMOS 8DPT5MK8-TATP 2GB
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内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-3200C16-16GIS 16GB
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内存RAM
Samsung M393B1K70QB0-CK0 8GB
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内存RAM
G Skill Intl F3-2400C10-8GTX 8GB
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内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Corsair CMK8GX4M1A2400C14 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
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Corsair CMK8GX4M2B3200C16 4GB
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内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
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Apacer Technology 78.CAGN7.4000C 8GB
内存RAM
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G Skill Intl F4-3600C17-4GTZ 4GB
G Skill Intl F4-3600C17-4GTZ 4GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
Kingston 99U5711-001.A00G 4GB
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内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
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Kingston KF3600C17D4/8GX 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
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Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
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Corsair CMSO32GX4M2A2133C15 16GB
内存RAM