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Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2666C18-8GFT 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs G Skill Intl F4-2666C18-8GFT 8GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
G Skill Intl F4-2666C18-8GFT 8GB

G Skill Intl F4-2666C18-8GFT 8GB

差异 规格 评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB 需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 79
    左右 47% 更低的延时
  • 更快的写入速度，GB/s
    7.8 left arrow 7.3
    测试中的平均数值
G Skill Intl F4-2666C18-8GFT 8GB 需要考虑的原因
G Skill Intl F4-2666C18-8GFT 8GB
报告一个错误
  • 更快的读取速度，GB/s
    14.1 left arrow 10.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2666C18-8GFT 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 79
  • 读取速度，GB/s
    10.6 left arrow 14.1
  • 写入速度，GB/s
    7.8 left arrow 7.3
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 11 13 15 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 1651

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

G Skill Intl F4-2666C18-8GFT 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMK32GX4M4E4133C19 8GB
Corsair CMK32GX4M4E4133C19 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-2666C18-8GFT 8GB
G Skill Intl F4-2666C18-8GFT 8GB
内存RAM
Team Group Inc. ZEUS-2133 8GB
Team Group Inc. ZEUS-2133 8GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
Crucial Technology BLS16G4D240FSE.16FBD 16GB
内存RAM
Kingston 9905471-071.A00LF 8GB
Kingston 9905471-071.A00LF 8GB
Kingston ACR26D4U9D8ME-16 16GB
Kingston ACR26D4U9D8ME-16 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Teikon TMA81GS6AFR8N-UHSC 8GB
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内存RAM
Kingston 9905469-153.A00LF 4GB
Kingston 9905469-153.A00LF 4GB
Corsair CMSX64GX4M4A2666C18 16GB
Corsair CMSX64GX4M4A2666C18 16GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
Kingmax Semiconductor GLLF62F-C6---------- 4GB
内存RAM
Kingston KHX3200C18D4/8G 8GB
Kingston KHX3200C18D4/8G 8GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
Crucial Technology BLT8G4D30AET4K.M8FE1 8GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Kllisre DDR4-8GB 8GB
Kllisre DDR4-8GB 8GB
内存RAM
Kingston 99U5471-049.A00LF 8GB
Kingston 99U5471-049.A00LF 8GB
Transcend Information JM3200HSE-32G 32GB
Transcend Information JM3200HSE-32G 32GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3600C19-8GVSB 8GB
G Skill Intl F4-3600C19-8GVSB 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
Essencore Limited IM4AGU88A30-FGGHMB 16GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Corsair CMG64GX4M2D3600C18 32GB
Corsair CMG64GX4M2D3600C18 32GB
内存RAM