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Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3000C15-4GVR 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs G Skill Intl F4-3000C15-4GVR 4GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
G Skill Intl F4-3000C15-4GVR 4GB

G Skill Intl F4-3000C15-4GVR 4GB

差异 规格 评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB 需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
G Skill Intl F4-3000C15-4GVR 4GB 需要考虑的原因
G Skill Intl F4-3000C15-4GVR 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 42
    左右 -62% 更低的延时
  • 更快的读取速度，GB/s
    18.5 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3000C15-4GVR 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 26
  • 读取速度，GB/s
    10.6 left arrow 18.5
  • 写入速度，GB/s
    7.8 left arrow 15.0
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 3332

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

G Skill Intl F4-3000C15-4GVR 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
G Skill Intl F4-3000C15-4GVR 4GB
G Skill Intl F4-3000C15-4GVR 4GB
内存RAM
Kingston 99U5584-010.A00LF 4GB
Kingston 99U5584-010.A00LF 4GB
Corsair CMD16GX4M4A2800C16 4GB
Corsair CMD16GX4M4A2800C16 4GB
内存RAM
Elpida EBJ40UG8EFU0-GN-F 4GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Kingston 9905713-004.A00G 4GB
Kingston 9905713-004.A00G 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Patriot Memory (PDP Systems) PSD48G213381 8GB
Patriot Memory (PDP Systems) PSD48G213381 8GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BL16G32C16U4WL.M16FE 16GB
Crucial Technology BL16G32C16U4WL.M16FE 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Corsair CMD8GX4M2B4000C19 4GB
Corsair CMD8GX4M2B4000C19 4GB
内存RAM
SK Hynix HMT41GU7BFR8A-PB 8GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Corsair CM4X8GF2400C16N2 8GB
Corsair CM4X8GF2400C16N2 8GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston 9965600-012.A02G 16GB
Kingston 9965600-012.A02G 16GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Samsung M471A1K43DB1-CTD 8GB
Samsung M471A1K43DB1-CTD 8GB
内存RAM
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Nanya Technology M2N1G64TUH8D5F-AC 1GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6AFR8N
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Gloway International (HK) STK4U2400D17081C 8GB
Gloway International (HK) STK4U2400D17081C 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Kingston 9905702-082.A00G 8GB
Kingston 9905702-082.A00G 8GB
内存RAM
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Samsung M393A4K40BB0-CPB 32GB
Samsung M393A4K40BB0-CPB 32GB
内存RAM
Kingston 9905403-134.A00LF 2GB
Kingston 9905403-134.A00LF 2GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
Crucial Technology BLS16G4D26BFSB.16FBD 16GB
内存RAM