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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Golden Empire CL18-20-20 D4-3600 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Golden Empire CL18-20-20 D4-3600 8GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
Golden Empire CL18-20-20 D4-3600 8GB

Golden Empire CL18-20-20 D4-3600 8GB

差异 规格 评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB 需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
Golden Empire CL18-20-20 D4-3600 8GB 需要考虑的原因
Golden Empire CL18-20-20 D4-3600 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 42
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    17.7 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Golden Empire CL18-20-20 D4-3600 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 28
  • 读取速度，GB/s
    10.6 left arrow 17.7
  • 写入速度，GB/s
    7.8 left arrow 15.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 3772

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

Golden Empire CL18-20-20 D4-3600 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Corsair CMT64GX4M8X3600C18 8GB
Corsair CMT64GX4M8X3600C18 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Kingston 9905743-045.A00G 16GB
Kingston 9905743-045.A00G 16GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Essencore Limited IM44GU48N24-FFFHAB 4GB
Essencore Limited IM44GU48N24-FFFHAB 4GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
Kingmax Semiconductor GZAG43F-18---------- 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
内存RAM
Kingston 99U5428-101.A00LF 8GB
Kingston 99U5428-101.A00LF 8GB
Kingston 9965640-006.A01G 32GB
Kingston 9965640-006.A01G 32GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
SK Hynix GKE160UD102408-2400 16GB
SK Hynix GKE160UD102408-2400 16GB
内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
Crucial Technology BL8G30C15U4BL.M8FE1 8GB
Crucial Technology BL8G30C15U4BL.M8FE1 8GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
Crucial Technology BL16G32C16U4W.M16FE1 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingmax Semiconductor GLLF62F-DA---------- 4GB
Kingmax Semiconductor GLLF62F-DA---------- 4GB
内存RAM
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43DB1-CWE 16GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung M471A2K43CB1-CRCR 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
Crucial Technology BLS4G4D26BFSC.8FD2 4GB
内存RAM
Kingston 9965662-016.A00G 16GB
Kingston 9965662-016.A00G 16GB
Teikon TMA81GS6AFR8N-UHSC 8GB
Teikon TMA81GS6AFR8N-UHSC 8GB
内存RAM