Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

需要考虑的原因
Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 42

左右 -62% 更低的延时
更快的读取速度，GB/s

15.5 10.6

测试中的平均数值
更快的写入速度，GB/s

10.2 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Hoodisk Electronics Co Ltd GKE800SO102408-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 26
读取速度，GB/s

10.6 15.5
写入速度，GB/s

7.8 10.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2150 2486

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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A-DATA Technology AO1P32NCSV1-BEWS 16GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

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A-DATA Technology DQVE1908 512MB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

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Crucial Technology BLE4G3D1608DE1TX0. 4GB

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Corsair CMK128GX4M8A2400C14 16GB