RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston MSI24D4S7S8MB-8 8GB
比较
Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Kingston MSI24D4S7S8MB-8 8GB
总分
Nanya Technology NT4GC72B4NA1NL-CG 4GB
总分
Kingston MSI24D4S7S8MB-8 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
需要考虑的原因
Kingston MSI24D4S7S8MB-8 8GB
报告一个错误
低于PassMark测试中的延时,ns
35
42
左右 -20% 更低的延时
更快的读取速度,GB/s
14.5
10.6
测试中的平均数值
更快的写入速度,GB/s
11.1
7.8
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Kingston MSI24D4S7S8MB-8 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
35
读取速度,GB/s
10.6
14.5
写入速度,GB/s
7.8
11.1
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2150
2580
Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较
Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB
Kingston MSI24D4S7S8MB-8 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Samsung M378A2K43EB1-CWE 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT8G4DFD8213.M16FA 8GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology BLT8G4D26AFTA.16FBD 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Micron Technology 36ASF2G72PZ-2G6E1 16GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Solarflare Communications CT16G4DFD824A.C16FBR 16GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Wilk Elektronik S.A. GR2666D464L19/16GN 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology AFLD44EK2P 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Gold Key Technology Co Ltd GKE800UD102408-2666 8GB
Kingston 99U5584-004.A00LF 4GB
Crucial Technology CT8G4DFD8213.C16FADP 8GB
Kingston KHX318C10FR/8G 8GB
Kingston ACR26D4U9S8ME-8 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Avant Technology J641GU42J9266ND 8GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3200C16-8GVK 8GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Samsung M378A2K43EB1-CWE 16GB
报告一个错误
×
Bug description
Source link