Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB vs Kingston MSI24D4S7S8MB-8 8GB

总分

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

总分

Kingston MSI24D4S7S8MB-8 8GB

Kingston MSI24D4S7S8MB-8 8GB

差异规格评论

差异

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

需要考虑的原因
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 35

左右 37% 更低的延时
更快的读取速度，GB/s

17.7 14.5

测试中的平均数值
更快的写入速度，GB/s

12.7 11.1

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11% 更高的带宽

Kingston MSI24D4S7S8MB-8 8GB

需要考虑的原因
Kingston MSI24D4S7S8MB-8 8GB

报告一个错误

规格

完整的技术规格清单

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Kingston MSI24D4S7S8MB-8 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

22 35
读取速度，GB/s

17.7 14.5
写入速度，GB/s

12.7 11.1
内存带宽，mbps

21300 19200

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

3075 2580

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Smart Modular SF4641G8CK8IEHLSBG 8GB

Smart Modular SF4641G8CK8IEHLSBG 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

G Skill Intl F4-3200C16-4GTZ 4GB

G Skill Intl F4-3200C16-4GTZ 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Wilk Elektronik S.A. GR2400S464L17S/8G 8GB

Wilk Elektronik S.A. GR2400S464L17S/8G 8GB

Samsung M393B4G70EMB-CK0 32GB

Samsung M393B4G70EMB-CK0 32GB

V-GEN D4H8GL36A8TXV 8GB

V-GEN D4H8GL36A8TXV 8GB

AMD R538G1601U2S-UO 8GB

AMD R538G1601U2S-UO 8GB

G Skill Intl F4-3200C16-4GTZB 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

G Skill Intl F4-3466C18-8GSXW 8GB

G Skill Intl F4-3466C18-8GSXW 8GB

Kingston 9965525-058.A00LF 8GB

Kingston 9965525-058.A00LF 8GB

Kingston 9905622-025.A01G 4GB

Kingston 9905622-025.A01G 4GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A-H9 16GB

Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A

Corsair CMK16GX4M2F4500C19 8GB

Corsair CMK16GX4M2F4500C19 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Corsair CMK32GX4M4A2400C16 8GB

Corsair CMK32GX4M4A2400C16 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Crucial Technology BL8G30C15U4B.8FE 8GB

Crucial Technology BL8G30C15U4B.8FE 8GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Transcend Information TS1GSH64V4B 8GB

Transcend Information TS1GSH64V4B 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMR64GX4M8X3800C19 8GB

Corsair CMR64GX4M8X3800C19 8GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

Corsair CMD64GX4M4B3466C16 16GB

Corsair CMD64GX4M4B3466C16 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Kingston 99U5625-015.A00G 16GB

Kingston 99U5625-015.A00G 16GB