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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Panram International Corporation PUD42400C154G2NJW 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Panram International Corporation PUD42400C154G2NJW 4GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
Panram International Corporation PUD42400C154G2NJW 4GB

Panram International Corporation PUD42400C154G2NJW 4GB

差异 规格 评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB 需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
Panram International Corporation PUD42400C154G2NJW 4GB 需要考虑的原因
Panram International Corporation PUD42400C154G2NJW 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 42
    左右 -62% 更低的延时
  • 更快的读取速度，GB/s
    13.7 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.2 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 26
  • 读取速度，GB/s
    10.6 left arrow 13.7
  • 写入速度，GB/s
    7.8 left arrow 10.2
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 2594

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

Panram International Corporation PUD42400C154G2NJW 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
Panram International Corporation PUD42400C154G2NJW 4GB
内存RAM
Qimonda 72T128420EFA3SB2 1GB
Qimonda 72T128420EFA3SB2 1GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
Crucial Technology BLS8G4D26BFSE.16FBR2 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Ramaxel Technology RMUA5110MB78HAF-2400 8GB
Ramaxel Technology RMUA5110MB78HAF-2400 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston ACR24D4U7S8MB-8 8GB
Kingston ACR24D4U7S8MB-8 8GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
Apacer Technology 78.D2GF2.4010B 16GB
Apacer Technology 78.D2GF2.4010B 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
A-DATA Technology AO2P24HC8T1-BTBS 8GB
内存RAM
G Skill Intl F3-2400C11-8GSR 8GB
G Skill Intl F3-2400C11-8GSR 8GB
Kingston 9905702-006.A00G 8GB
Kingston 9905702-006.A00G 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
内存RAM
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
内存RAM
Ramos Technology EWB8GB681CA3-16IC 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology BLS16G4D240FSC.16FAD 16GB
Crucial Technology BLS16G4D240FSC.16FAD 16GB
内存RAM
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AD73I1B1672EG 2GB
Corsair CMK16GX4M2L3200C16 8GB
Corsair CMK16GX4M2L3200C16 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Kingston 9905743-034.A00G 8GB
Kingston 9905743-034.A00G 8GB
内存RAM
Corsair CM5S16GM4800A40K2 16GB
Corsair CM5S16GM4800A40K2 16GB
Apacer Technology 78.C2GFA.AF30B 8GB
Apacer Technology 78.C2GFA.AF30B 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
内存RAM