Nanya Technology NT4GC72B4NA1NL-CG 4GB vs SK Hynix HMA81GS6CJR8N-XN 8GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

SK Hynix HMA81GS6CJR8N-XN 8GB

SK Hynix HMA81GS6CJR8N-XN 8GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

SK Hynix HMA81GS6CJR8N-XN 8GB

需要考虑的原因
SK Hynix HMA81GS6CJR8N-XN 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 42

左右 -17% 更低的延时
更快的读取速度，GB/s

15.5 10.6

测试中的平均数值
更快的写入速度，GB/s

11.9 7.8

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

SK Hynix HMA81GS6CJR8N-XN 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 36
读取速度，GB/s

10.6 15.5
写入速度，GB/s

7.8 11.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2150 2734

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Corsair CMR64GX4M8C3200C16 8GB

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Kingston K1N7HK-ELC 2GB

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Corsair CM3X8GA2400C11Y2R 8GB

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SpecTek Incorporated PSD34G13332 4GB

SpecTek Incorporated PSD34G13332 4GB

Corsair CMK16GX4M2D3600C16 8GB

Corsair CMK16GX4M2D3600C16 8GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

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Essencore Limited KD4AGS88C-32N220D 16GB

Essencore Limited KD4AGS88C-32N220D 16GB

Samsung M391B5673FH0-CH9 2GB

Samsung M391B5673FH0-CH9 2GB

G Skill Intl F4-4000C18-8GTRG 8GB

G Skill Intl F4-4000C18-8GTRG 8GB