Nanya Technology NT4GC72B4NA1NL-CG 4GB vs SK Hynix HMT31GR7CFR4A-PB 8GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

SK Hynix HMT31GR7CFR4A-PB 8GB

SK Hynix HMT31GR7CFR4A-PB 8GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

更快的读取速度，GB/s

10.6 10.5

测试中的平均数值

SK Hynix HMT31GR7CFR4A-PB 8GB

需要考虑的原因
SK Hynix HMT31GR7CFR4A-PB 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 42

左右 -40% 更低的延时
更快的写入速度，GB/s

10.4 7.8

测试中的平均数值
更高的内存带宽，mbps

12800 10600

左右 1.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

SK Hynix HMT31GR7CFR4A-PB 8GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

42 30
读取速度，GB/s

10.6 10.5
写入速度，GB/s

7.8 10.4
内存带宽，mbps

10600 12800

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
时序/时钟速度

7-7-7-20 / 1333 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2150 2407

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 18ASF2G72PDZ-2G3B1 16GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Micron Technology 18ASF2G72AZ-2G6D1 16GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Kingston 9965525-144.A00LF 8GB

Corsair CMK32GX4M4A2133C13 8GB

Corsair CMK32GX4M4A2133C13 8GB

Samsung M393B1G70BH0-YK0 8GB

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Kingston 9905403-134.A00LF 2GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB

SK Hynix V-GeN D4H4GL26A8TL5 4GB