Patriot Memory (PDP Systems) PSD38G1600L2S 8GB vs Micron Technology 18ASF2G72AZ-2G6D1 16GB

总分

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

总分

Micron Technology 18ASF2G72AZ-2G6D1 16GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

报告一个错误

Micron Technology 18ASF2G72AZ-2G6D1 16GB

需要考虑的原因
Micron Technology 18ASF2G72AZ-2G6D1 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 41

左右 -64% 更低的延时
更快的读取速度，GB/s

16.8 14

测试中的平均数值
更快的写入速度，GB/s

12.8 9.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 25
读取速度，GB/s

14.0 16.8
写入速度，GB/s

9.2 12.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2356 2989

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Nanya Technology M2F8G64CB8HC9N-DI 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

Ramaxel Technology RMSA3260MH78H8H-2666 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Kingston KV0M5R-HYD 8GB

Kingston KV0M5R-HYD 8GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

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Kingmax Semiconductor FLFF65F-C8KL9 4GB

Kingmax Semiconductor FLFF65F-C8KL9 4GB

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Ramos Technology EWB8GB681CA3-16IC 8GB

InnoDisk Corporation 16GB

InnoDisk Corporation 16GB

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Samsung M378A1G43DB0-CPB 8GB

A-DATA Technology AO1P24HC8T1-BPGS 8GB

A-DATA Technology AO1P24HC8T1-BPGS 8GB