Nanya Technology NT8GA64D88AX3S-HR 8GB vs Samsung M378A1G43EB1-CPB 8GB

总分

Nanya Technology NT8GA64D88AX3S-HR 8GB

Nanya Technology NT8GA64D88AX3S-HR 8GB

总分

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

差异规格评论

差异

Nanya Technology NT8GA64D88AX3S-HR 8GB

需要考虑的原因
Nanya Technology NT8GA64D88AX3S-HR 8GB

报告一个错误

更高的内存带宽，mbps

21300 17000

左右 1.25% 更高的带宽

Samsung M378A1G43EB1-CPB 8GB

需要考虑的原因
Samsung M378A1G43EB1-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 96

左右 -182% 更低的延时
更快的读取速度，GB/s

15.4 6.8

测试中的平均数值
更快的写入速度，GB/s

11.5 4.2

测试中的平均数值

规格

完整的技术规格清单

Nanya Technology NT8GA64D88AX3S-HR 8GB

Samsung M378A1G43EB1-CPB 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

96 34
读取速度，GB/s

6.8 15.4
写入速度，GB/s

4.2 11.5
内存带宽，mbps

21300 17000

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

992 2763

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology BL16G32C16U4B.16FE 16GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB

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Kingston KVR16N11/8-SP 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-2400 CL16 8GB 8GB

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Samsung M471B5173DB0-YK0 4GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB