Nanya Technology NT8GA64D88CX3S-JR 8GB vs Samsung M471A1K43DB1-CWE 8GB

总分

Nanya Technology NT8GA64D88CX3S-JR 8GB

Nanya Technology NT8GA64D88CX3S-JR 8GB

总分

Samsung M471A1K43DB1-CWE 8GB

Samsung M471A1K43DB1-CWE 8GB

差异规格评论

差异

Nanya Technology NT8GA64D88CX3S-JR 8GB

需要考虑的原因
Nanya Technology NT8GA64D88CX3S-JR 8GB

报告一个错误

Samsung M471A1K43DB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43DB1-CWE 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 38

左右 -15% 更低的延时
更快的读取速度，GB/s

16.1 14.2

测试中的平均数值
更快的写入速度，GB/s

13.0 9.8

测试中的平均数值

规格

完整的技术规格清单

Nanya Technology NT8GA64D88CX3S-JR 8GB

Samsung M471A1K43DB1-CWE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 33
读取速度，GB/s

14.2 16.1
写入速度，GB/s

9.8 13.0
内存带宽，mbps

25600 25600

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

2451 2987

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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