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Netac Technology Co Ltd E40832A 8GB
Samsung M471A2K43CB1-CRC 16GB

Netac Technology Co Ltd E40832A 8GB vs Samsung M471A2K43CB1-CRC 16GB

总分
star star star star star
Netac Technology Co Ltd E40832A 8GB

Netac Technology Co Ltd E40832A 8GB

总分
star star star star star
Samsung M471A2K43CB1-CRC 16GB

Samsung M471A2K43CB1-CRC 16GB

差异 规格 评论

差异

Netac Technology Co Ltd E40832A 8GB 需要考虑的原因
Netac Technology Co Ltd E40832A 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 38
    左右 11% 更低的延时
  • 更快的读取速度，GB/s
    16.4 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 9.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11% 更高的带宽
Samsung M471A2K43CB1-CRC 16GB 需要考虑的原因
Samsung M471A2K43CB1-CRC 16GB
报告一个错误

规格

完整的技术规格清单
Netac Technology Co Ltd E40832A 8GB
Samsung M471A2K43CB1-CRC 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    34 left arrow 38
  • 读取速度，GB/s
    16.4 left arrow 13.8
  • 写入速度，GB/s
    10.8 left arrow 9.1
  • 内存带宽，mbps
    21300 left arrow 19200
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2732 left arrow 2404

Netac Technology Co Ltd E40832A 8GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M471A2K43CB1-CRC 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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