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Panram International Corporation PUD31600C114G2VS 4GB
Kingston ACR26D4S9D8ME-16 16GB

Panram International Corporation PUD31600C114G2VS 4GB vs Kingston ACR26D4S9D8ME-16 16GB

总分
star star star star star
Panram International Corporation PUD31600C114G2VS 4GB

Panram International Corporation PUD31600C114G2VS 4GB

总分
star star star star star
Kingston ACR26D4S9D8ME-16 16GB

Kingston ACR26D4S9D8ME-16 16GB

差异 规格 评论

差异

Panram International Corporation PUD31600C114G2VS 4GB 需要考虑的原因
Panram International Corporation PUD31600C114G2VS 4GB
报告一个错误
Kingston ACR26D4S9D8ME-16 16GB 需要考虑的原因
Kingston ACR26D4S9D8ME-16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 40
    左右 -8% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 13.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.3 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Panram International Corporation PUD31600C114G2VS 4GB
Kingston ACR26D4S9D8ME-16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 37
  • 读取速度，GB/s
    13.6 left arrow 15.4
  • 写入速度，GB/s
    8.4 left arrow 11.3
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2255 left arrow 2765

Panram International Corporation PUD31600C114G2VS 4GB RAM的比较

Patriot Memory (PDP Systems) 2400 C17 8GB
G Skill Intl F4-4600C18-8GTRS 8GB

Kingston ACR26D4S9D8ME-16 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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内存RAM
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内存RAM
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Kingston KHX3466C19D4/8G 8GB
内存RAM
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SK Hynix HMT325U6CFR8C-PB 2GB
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内存RAM
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Crucial Technology CT51264AC800.C16FC 4GB
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Wilk Elektronik S.A. GR2666S464L19S/8G 8GB
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